Effects of wave function penetration into the gate-oxide on self-consistent modeling of scaled MOSFETs

IEEE Transactions on Electron Devices

Volumn 49, Issue 4, 2002, Pages 693-695

  Kauser, Mhammad Zahed ^b   Hasan, Md Sayed ^a,c   Haque, Anisul ^a,b  

^a IEEE

^b BANGLADESH UNIVERSITY OF ENGINEERING AND TECHNOLOGY   (Bangladesh)

^c PURDUE UNIVERSITY   (United States)

Author keywords

MOSFET modeling; MOSFET scaling; Quantum effects; Wave function penetration

Indexed keywords

ELECTRONS; INTERFACES (MATERIALS); NUMERICAL ANALYSIS; OXIDES; POISSON DISTRIBUTION; WAVE EFFECTS;

QUANTIZATION; WAVE FUNCTION PENETRATION;

MOSFET DEVICES;

EID: 0036539134     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.992881     Document Type: Article

References (6)

1. Self-consistent results for n-type Si inversion layers
2. On the use of appropriate boundary conditions to calculate the normalized wave functions in the inversion layer of MOSFET's with ultra-thin gate oxides
3. Modeling of direct tunneling current through gate dielectric stacks
4. Understanding the effects of wave function penetration on the inversion layer capacitance of NMOSFET's
5. An efficient technique to calculate the normalized wave functions in arbitrary one-dimensional quantum well structures
6. Impact of electron and hole inversion-layer capacitance on low voltage operation of scaled n- and p-MOSFET's