A simple and efficient model for quantization effects of hole inversion layers in MOS devices

IEEE Transactions on Electron Devices

Volumn 48, Issue 12, 2001, Pages 2893-2898

  Hou, Yong Tian ^a,b   Li, Ming Fu ^a,b  

^a IEEE   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Inversion layers; MOS devices; Quantization

Indexed keywords

INVERSION LAYERS; QUANTIZATION;

ANISOTROPY; BAND STRUCTURE; COMPUTER SIMULATION; ELECTRIC FIELD EFFECTS; ELECTRONIC DENSITY OF STATES; HOLE MOBILITY; SEMICONDUCTOR DEVICE MODELS; THRESHOLD VOLTAGE;

MOS DEVICES;

EID: 0035691472     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.974723     Document Type: Article

References (24)

1. Self-consistent results for n-type Si inversion layer
2. Electronic properties of two-dimensional systems
3. Self-consistent calculation of electron and hole inversion charges at silicon-silicon dioxide interfaces
4. Quantum mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFETs
5. A simple model for quantization effects in heavily-doped silicon MOSFETs at inversion conditions
6. Quantization effects in inversion layers of pMOSFETs on Si (100) substrate
7. Electron and hole quantization and their impact on deep submicron silicon p- and n-MOSFET characteristics
8. Experimental determination of threshold voltage shifts due to quantum mechanical effects in MOS electron and hole inversion layers
9. Quantitative understanding of inversion-layer capacitance in Si MOISFETs
10. Accurate characterization of electron and hole inversion-layer capacitance and its impact on low voltage operation of scaled MOSFETs
11. Analytical modeling of metal oxide semiconductor inversion-layer capacitance
12. Hole confinement and energy subbands in a silicon inversion layer using the effective mass theory
13. Explaining the dependences of the hole and electron mobilities in Si inversion layers
14. xN strained quantum wells
15. Shallow impurity states in Si and Ge
16. Simplified method to calculate the band bending and the subband energies in MOS capacitors
17. A computationally efficient model for inversion layer quantization effects in deep submicron n-channel MOSFETs
18. Effective density-of-states to QM correction in MOS structures
19. Modeling study of ultrathin gate oxides using direct tunneling current and capacitance-voltage measurements in MOS devices
20. Quantum theory of cyclotron resonance in semiconductors: General theory
21. The influence of tunneling effect and inversion layer quantization effect on threshold voltage of deep submicron MOSFETs