Plasma damage immunity of thin gate oxide grown on very lightly N+ implanted silicon

IEEE Electron Device Letters

Volumn 19, Issue 7, 1998, Pages 231-233

  Cheung, K P ^a   Misra, D ^b   Colonell, J I ^a   Liu, C T ^a   Ma, Y ^a   Chang, C P ^a   Lai, W Y C ^a   Liu, R ^a   Pai, C S ^a  

^a LUCENT TECHNOLOGIES   (United States)

^b NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ION IMPLANTATION; NITROGEN; OXIDES; PLASMAS; SEMICONDUCTING SILICON;

THIN GATE OXIDES;

GATES (TRANSISTOR);

EID: 0032121584     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.701426     Document Type: Article

References (10)

1. For a review, see L. K. Han, M. Bhat, D. Wristers, H. H. Wang, and D. L. Kwong, "Recent developments in ultra thin oxynitride gate dielectrics," Microelectron. Eng., vol. 28, p. 89, 1995.
2. C. T. Liu, Y. Ma, K. P. Cheung, C. P. Chang, L. Fritzinger, J. Becerro, H. Luftman, H. M. Vaidya, J. I. Colonell, A. Kamgar, J. F. Minor, R. G. Murray, W. Y. C. Lai, C. S. Pai, and S. J. Hillenius, "25 Å gate oxide without boron penetration for 0.25- and 0.3-μm PMOSFET's," in Tech. Dig., 1996 Symp. VLSI Technol., p. 18.
3. K. P. Cheung, "A new method to monitor gate-oxide reliability degradation," in Tech. Dig., VLSI Technol. Symp., 1995, p. 83.
4. T. Arakawa, T. Hayashi, M. Ohno, R. Matsumoto, A. Uchiyama, and H. Fukuda, "Relationship between nitrogen profile and reliability of heavily oxynitrided tunnel oxide films for flash electrically erasable and programmable ROM's," Jpn. J. Appl. Phys., vol. 34, p. 1007, 1995.
5. 2O oxide and pure oxide," in Proc. 1996 Int. Symp. Plasma Process Induced Damage (P21D), p. 181.
6. D. Crook, M. Domnitei, M. Webb, and J. Bonini, "Evaluation of modern gate oxide technologies to process charging," in Proc. 1993 IEEE/IRPS, p. 255.
7. 2O-nitrided oxides," J. Appl. Phys., vol. 79, p. 1583, 1996.
8. H. Shin and C. Hu, "Monitoring plasma-process induced damage in thin oxide," IEEE Tran. Semicond. Manufact., vol. 6, p. 96, Feb. 1993.
9. K. P. Cheung, "On the use of Fowler-Nordheim stress to reveal plasma-charging damage," in Proc. 1996 Int. Symp. Plasma Process Induced Damage (P2ID), p. 11.
10. K. P. Cheung, D. Misra, K. G. Steiner, J. I. Colonell, C.-P. Chang, W.-Y.-C. Lai, C.-T. Liu, R. Liu, and C.-S. Pai, "Is NMOSFET hot carrier lifetime degradaed by charging damage?," in Proc. 1997 Int. Symp. Plasma Process Induced Damage (P2ID), p. 186.