Channel hot-electron and hot-hole improvement in Al and Cu multilevel metal CMOS using deuterated anneals and passivating films

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1999, Pages 89-92

  Clark, W F ^a   Cottrell, P E ^a   Ference, T G ^a   Lo, S H ^a   Massey, J G ^a   Mittl, S W ^a   Rankin, J H ^a  

^a IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ANNEALING; COPPER; HOT CARRIERS; PASSIVATION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DEVICE MANUFACTURE; TEMPERATURE;

ALUMINUM INTERCONNECTS; BACK END OF LINE PROCESSING; COPPER INTERCONNECTS; DEUTERATED ANNEALS; DEUTERATED FORMING GAS; HOT ELECTRON LIFETIME; HYDROGEN FORMING GAS; MULTILEVEL METAL CMOS; PASSIVATING FILMS;

MOSFET DEVICES;

EID: 0033332622     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)