Assessment of charge-induced damage to ultra-thin gate MOSFETs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1997, Pages 445-448

  Krishnan, S ^a   Rangan, S ^a   Hattangady, S ^a   Xing, G ^a   Brennan, K ^a   Rodder, M ^a   Ashok, S ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INDUCTIVELY COUPLED PLASMAS (ICP); REMOTE PLASMA NITRIDED (RPN) OXIDES; ULTRATHIN GATE DEVICES;

ANNEALING; ANTENNAS; DEUTERIUM; ELECTRIC CHARGE; ETCHING; GATES (TRANSISTOR); NITRIDING; PASSIVATION; PLASMA APPLICATIONS; PLASMA DEVICES;

MOSFET DEVICES;

EID: 84886448104     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)