Gate oxides grown on deuterium-implanted silicon substrate

Electrochemical and Solid-State Letters

Volumn 2, Issue 12, 1999, Pages 637-639

  Misra, D ^a   Kishore, S ^a  

^a NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; DEUTERIUM; DIFFUSION IN SOLIDS; ELECTRON TRAPS; GATES (TRANSISTOR); ION IMPLANTATION; LEAKAGE CURRENTS; OXIDES; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SUBSTRATES;

GATE OXIDES;

MOSFET DEVICES;

EID: 0033284341     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1390932     Document Type: Article

References (10)

1. P. Balk, Abstract 109, p. 237, The Electrochemical Society Extended Abstracts, Vol. 65-1, San Francisco, CA, May 9-13, 1965.
2. N. M. Johnson, D. K. Biegelsen, and M. D. Moyer, J. Vac. Sci. Technol., 19, 390 (1981).
3. K. P. Cheung, D. Misra, K. G. Steiner, J. I. Colonell, C. P. Chang, W. Y. C. Lai, C. T. Liu, R. Liu, and C-S. Pai, in Proceedings of 2nd International Symposium on Plasma Process-Induced Damage, p. 186, Monterey, CA, May 13-14, 1997.
4. J. W. Lyding, K. Hess, and I. C. Kizilyalli, Appl. Phys. Lett., 68, 2526 (1996).
5. K. Hess, I. C. Kizilyalli, and J. W. Lyding, IEEE Trans. Electron Devices, 45, 406 (1998).
6. H. C. Mogul, L. Cong, R. M. Wallace, P. J. Chen, T. A. Rost, and K. Harvey, Appl. Phys. Lett., 72, 1721 (1998).
7. S. Krishnan, S. Rangan, S. Hattangady, G. Xing, K. Brennan, M. Rodder, and S. Ashok, Tech. Dig. Int. Electron Devices Meet., 445 (1997).
8. R. A. B. Devine, J. L. Autran, W. L. Warren, K. L. Vanheusdan, and J. C. Rostaing, Appl. Phys. Lett., 70, 2999 (1997).
9. P. J. Chen and R. M. Wallace, Appl. Phys. Lett., 73, 3441 (1998).
10. D. J. DiMaria, D. Arnold, and E. Cartier, Appl. Phys. Lett., 61, 2329 (1992).