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Volumn 75, Issue 1, 2002, Pages 101-112

Defects in III-V semiconductor surfaces

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC PROPERTIES; RELAXATION PROCESSES; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SURFACES;

EID: 0036642863     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003390101059     Document Type: Article
Times cited : (18)

References (95)
  • 44
    • 0006183058 scopus 로고    scopus 로고
    • Untersuchung von Defekten auf und nahe der (110) Oberfläche von GaAs und weiteren III-V Halbleitern
    • Thesis, Technische Universität Berlin, in preparation
    • Schwarz, G.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.