Stoichiometry changes by selective vacancy formation on (110) surfaces of III-V semiconductors: Influence of electronic effects

Journal of Chemical Physics

Volumn 114, Issue 1, 2001, Pages 445-451

  Semmler, U ^a   Simon, M ^a   Ebert, Ph ^a   Urban, K ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC STRUCTURE; ENERGY GAP; FERMI LEVEL; FERMI SURFACE; POINT DEFECTS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR DOPING; SINGLE CRYSTALS; STOICHIOMETRY;

ENERGY BARRIER HEIGHT; VACANCY FORMATION;

SEMICONDUCTOR MATERIALS;

EID: 0035147962     PISSN: 00219606     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1328412     Document Type: Article

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