Effect of the hydrogen partial pressure ratio on the properties of uc-Si : H films prepared by rf magnetron sputtering

Vacuum

Volumn 59, Issue 2-3, 2000, Pages 785-791

  Makihara, H ^a   Tabata, A ^a   Suzuoki, Y ^a   Mizutani, T ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005855312     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0042-207x(00)00348-1     Document Type: Article

References (10)

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