Effects of backgate voltage on electrical characteristics of poly-Si thin film transistors fabricated on stainless-steel substrate

Japanese journal of applied physics

Volumn 39, Issue 12 B, 2000, Pages

  Serikawa, Tadashi ^a   Omata, Fujio ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; ELECTRIC FIELD EFFECTS; POLYSILICON; SEMICONDUCTING SILICON; STAINLESS STEEL; THRESHOLD VOLTAGE;

BACKGATE VOLTAGE;

THIN FILM TRANSISTORS;

EID: 0034472707     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.l1277     Document Type: Article

References (9)