Ultra-thin silicon-oxide films by sputter-deposition and their application to high-quality poly-Si TFTS

Vacuum

Volumn 51, Issue 4, 1998, Pages 781-783

  Serikawa, T ^a   Shirai, S ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC POTENTIAL; ELECTRIC PROPERTIES; LEAKAGE CURRENTS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON COMPOUNDS; SILICA; SPUTTER DEPOSITION; SURFACE ROUGHNESS; THIN FILM TRANSISTORS; ULTRATHIN FILMS;

LOW TEMPERATURE DEPOSITION;

SEMICONDUCTING FILMS;

EID: 0032310648     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0042-207x(98)00290-5     Document Type: Article

References (10)

1. Morozumi, S., Oguchi, K., Yazawa, S., Kodaira, T., Oshima, H. and Mano, T., 1983 SID Int. Symp. Digest of Technical Papers (Los Angeles, USA, 1983), p. 156.
2. Malhi, S. D. S., Shichijo, H., Banerjee, S. K., Sunderson, R., Elahy, M., Pollack, G. P., Richardson, W. A., Shah, H., Hite, L. R. and Womack, R. H., IEEE Trans. Electron Devices, 1985, ED-32, 258.
3. Ota, M., Yoneya, M. and Kondo, K., Proceedings 16th. Inter. Display Res. Conf., (Birmingham, England, Oct. 1996), p. 49.
4. Serikawa, T., Shirai, S., Okamoto, A. and Suyama, S., IEEE Trans. Electron Devices, 1989, ED-36, 1928.
5. Suyama, S., Okamoto, A., Shirai, S. and Serikawa, T., Mater. Res. Soc. Proc., 1989, 146, 301.
6. Suyama, S., Okamoto, A. and Serikawa, T., J. Appl. Phys., 1989, 65, 210.
7. Serikawa, T., Shirai, S. and Okamura, M., Digest of Technical Papers of 1995 Int. Workshop on Active-Matrix Liquid-Crystal Displays (AM- LCD 95) (Osaka, Japan, Aug., 1995), p. 81.
8. Serikawa, T. and Shirai, S., Jpn. J. Appl. Phys., 1994, 33, 4465.
9. Dimitriadis, C. A., Tassis, D. H., Stoemenos, J. and Economou, N. A., Solid State Phenomena, 1994, 37-38, 577.
10. Serikawa, T., Shirai, S., Nakagawa, K., Takaoka, S., Oto, K., Murase, K. and Ishida, S., Jpn. J. Appl. Phys., 1996, 2B, 937.