Vital issues for SiC power devices

Materials Science Forum

Volumn 264-268, Issue PART 2, 1998, Pages 901-906

  Hara, K ^a  

^a DENSO CORPORATION   (Japan)

Author keywords

Accumulation Mode; Avalanche Breakdown; Comet Tail Defects; Epi Layer Channel; Micropipe Defects; Power EC FET; Specific On Resistance

Indexed keywords

ANISOTROPY; CRYSTAL DEFECTS; ELECTRIC RESISTANCE; EPITAXIAL GROWTH; LEAKAGE CURRENTS; MOSFET DEVICES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON CARBIDE; THERMOOXIDATION;

EPI CHANNEL (EC) FIELD EFFECT TRANSISTORS; POWER DEVICES;

MOS DEVICES;

EID: 0031652175     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.901     Document Type: Article

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