Fabricating tunable semiconductor devices with an atomic force microscope

Applied Physics Letters

Volumn 75, Issue 8, 1999, Pages 1134-1136

  Held, R ^a   Luscher S ^a   Heinzel, T ^a   Ensslin, K ^a   Wegscheider, W ^b  

^a ETH ZURICH   (Switzerland)

^b WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARRIER CONCENTRATION; CARRIER MOBILITY; ELECTRON SCATTERING; EXTRAPOLATION; HALL EFFECT; MAGNETORESISTANCE; OXIDATION; PHOTOLITHOGRAPHY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WIRES; TUNING;

HALL BAR GEOMETRIES; MAGNETOTRANSPORT PROPERTIES;

HETEROJUNCTIONS;

EID: 0344183015     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124620     Document Type: Article

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