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Journal of Crystal Growth

Volumn 236, Issue 1-3, 2002, Pages 95-100

Rapid relaxation of crystallographic anisotropy in SiO2-removed lateral epitaxial overgrown GaN layers

(7) Kim, Min Hong a Choi, Yoonho a Yi, Jae Hyung a Yang, Min a Jeon, Jina a Khym, Seongwon a Leem, Shi Jong a

a LG Electronics Inc (South Korea)

Author keywords

A1. Stresses; A3. Lateral overgrowth; A3. Metalorganic chemical vapor deposition; B1. Gallium compounds

Indexed keywords

ANISOTROPY; COALESCENCE; CRYSTALLOGRAPHY; ETCHING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON; STRAIN; X RAY ANALYSIS;

CRYSTALLOGRAPHIC ANISOTROPY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0036499296 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)02197-2 Document Type: Article

Times cited : (5)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.