Relaxation of anisotropic domain tilting along vertical growth direction in selectively lateral overgrown GaN by hydride vapor phase epitaxy

Journal of Crystal Growth

Volumn 208, Issue 1, 2000, Pages 804-808

  Kim, Chinkyo ^a   Yi, Jaehyung ^a   Kim, Sungwoo ^a   Hong Kim, Min ^a   Yang, Min ^a   Choi, Yoonho ^a   Yoo, Tae Kyung ^a   Tai Kim, Seon ^b  

^a LG   (South Korea)

^b Daejon National University of Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

HYDRIDES; MATHEMATICAL MODELS; RELAXATION PROCESSES; SAPPHIRE; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM COMPOUNDS; SILICA; STRESS CONCENTRATION; VAPOR PHASE EPITAXY; X RAY CRYSTALLOGRAPHY;

GALLIUM NITRIDE;

SEMICONDUCTOR GROWTH;

EID: 0033889114     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00449-2     Document Type: Article

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