Improved model for the stress-induced leakage current in thin silicon dioxide based on conduction-band electron and valence-band electron tunneling

Journal of Applied Physics

Volumn 91, Issue 3, 2002, Pages 1577-1588

  Chim, W K ^a   Lim, P S ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION MECHANISM; CONDUCTION-BAND ELECTRONS; ENERGY RELAXATION; EXPERIMENTAL MEASUREMENTS; IMPROVED MODELS; INELASTIC MECHANISMS; INELASTIC TUNNELING; STRESS-INDUCED LEAKAGE CURRENT; THIN OXIDES; TRAP CONCENTRATION; VALENCE-BAND ELECTRON TUNNELING; VALENCE-BAND ELECTRONS;

ELECTRON TUNNELING;

SILICA;

EID: 0036470701     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1429799     Document Type: Article

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