Evidence of hole direct tunneling through ultrathin gate oxide using P+ poly-SiGe gate

IEEE Electron Device Letters

Volumn 20, Issue 6, 1999, Pages 268-270

  Lee, Wen Chin ^a   King, Tsu Jae ^a   Hu, Chenming ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TUNNELING; ENERGY GAP; MOS DEVICES; OXIDES; SEMICONDUCTING SILICON COMPOUNDS;

HOLE TUNNELING; ULTRATHIN GATE OXIDES;

GATES (TRANSISTOR);

EID: 0032666009     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.767094     Document Type: Article

References (9)

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