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Volumn 44, Issue 9, 2000, Pages 1703-1706

Conduction-band deformation effect on stress-induced leakage current

Author keywords

[No Author keywords available]

Indexed keywords

LEAKAGE CURRENTS; SEMICONDUCTOR DEVICE MODELS;

EID: 0034274297     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00093-9     Document Type: Article
Times cited : (6)

References (8)
  • 1
    • 0001431712 scopus 로고    scopus 로고
    • Modeling of stress-induced leakage current in ultrathin oxides with the trap-assisted tunneling mechanism
    • Anthony C.I., Kafai L., Kiran K., Prasenjit C., Jack C. Modeling of stress-induced leakage current in ultrathin oxides with the trap-assisted tunneling mechanism. Appl Phys Lett. 70:1997;3407.
    • (1997) Appl Phys Lett , vol.70 , pp. 3407
    • Anthony, C.I.1    Kafai, L.2    Kiran, K.3    Prasenjit, C.4    Jack, C.5
  • 2
    • 0032255804 scopus 로고    scopus 로고
    • A new model of tunneling current and SILC in ultrathin oxides
    • Larcher L, Paccagnella A, Scarpa A, Ghidini G. A new model of tunneling current and SILC in ultrathin oxides. IEDM 1998;903.
    • (1998) IEDM , pp. 903
    • Larcher, L.1    Paccagnella, A.2    Scarpa, A.3    Ghidini, G.4
  • 3
    • 0033080327 scopus 로고    scopus 로고
    • A new I-V model for stress-induced leakage current including inelastic tunneling
    • Takagi S., Yasuda N., Toriumi A. A new I-V model for stress-induced leakage current including inelastic tunneling. IEEE Trans Electron Dev. 46:1999;348.
    • (1999) IEEE Trans Electron Dev , vol.46 , pp. 348
    • Takagi, S.1    Yasuda, N.2    Toriumi, A.3
  • 5
    • 0343804178 scopus 로고
    • 2 interface observed by Fowler-Nordheim tunneling
    • 2 interface observed by Fowler-Nordheim tunneling. J Vac Sci Technol. 20:1982;743.
    • (1982) J Vac Sci Technol , vol.20 , pp. 743
    • Maserjian, J.1    Zamani, N.2
  • 6
    • 0001917021 scopus 로고
    • Stress-induced current in thin silicon dioxide films
    • Moazzami R, Hu C. Stress-induced current in thin silicon dioxide films. IEDM 1992;139:1-3.
    • (1992) IEDM , vol.139 , pp. 1-3
    • Moazzami, R.1    Hu, C.2
  • 7
    • 0028196184 scopus 로고
    • Long term charge loss in EPROMs with ONO interpoly dielectric
    • Herrmann MR, Ciappa M, Schenk A. Long term charge loss in EPROMs with ONO interpoly dielectric. IRPS 1994;368.
    • (1994) IRPS , pp. 368
    • Herrmann, M.R.1    Ciappa, M.2    Schenk, A.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.