A low temperature technology on the base of hydrogen enhanced thermal donor formation for future high-voltage applications

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4746 I, Issue , 2002, Pages 405-413

  Job, R ^a   Ulyashin, A G ^a   Fahrner, W R ^a   Niedernostheide, F J ^a   Schulze, H J ^a   Simoen, E ^a   Claeys, C L ^a   Tonelli, G ^a  

^a UNIVERSITY OF HAGEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPUTER SIMULATION; CRYSTAL GROWTH FROM MELT; ELECTRIC POTENTIAL; HYDROGEN; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR PLASMAS; SILICON WAFERS; TEMPERATURE;

CZOCHRALSKI SILICON; THERMAL DONOR FORMATION;

SEMICONDUCTOR DIODES;

EID: 0036406453     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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