Study of shallow donor formation in hydrogen-implanted n-type silicon

Semiconductor Science and Technology

Volumn 13, Issue 2, 1998, Pages 194-199

  Tokuda, Yutaka ^a   Ito, Akira ^b   Ohshima, Hisayoshi ^c  

^a AICHI INSTITUTE OF TECHNOLOGY   (Japan)

^b SUZUKA NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^c DENSO CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0011922835     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/13/2/007     Document Type: Article

References (19)

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