Phosphorus and boron implantation in 6H-SiC

Journal of Applied Physics

Volumn 81, Issue 10, 1997, Pages 6635-6641

  Rao, Mulpuri V ^a   Gardner, Jason A ^a   Chi, P H ^b   Holland, O W ^c   Kelner, G ^d   Kretchmer, J ^e   Ghezzo, M ^e  

^a George Mason University   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^c OAK RIDGE NATIONAL LABORATORY   (United States)

^d NAVAL RESEARCH LABORATORY   (United States)

^e GE Corporate Research and   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000893971     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.365236     Document Type: Article

References (38)

1. P. G. Neudeck, J. Electron. Mater. 24, 283 (1995).
2. H. M. Hobgood, R. C. Glass, G. Augustine, R. H. Hopkins, J. Jenny, M. Skowronski, W. C. Mitchel, and M. Roth, Appl. Phys. Lett. 66, 1364 (1995).
3. W. Xie, J. A. Cooper, Jr., and M. R. Melloch, IEEE Electron Device Lett. 15,455 (1994).
4. D. M. Brown, M. Ghezzo, J. Kretchmer, V. Krishnamurthy, G. Michon, and G. Gati, in Transactions of the 2nd International High Temperature Electronics Conference, edited by D. B. King and F. V. Thome, Charlotte, NC, June 5-10, 1994, Vol. 1, p. XI-17.
5. D. B. Slater, Jr., G. M. Johnson, L. A. Lipkin, A. V. Suvorov, and J. W. Palmour, in Transactions of the Third International High Temperature Electronics Conference, Albuquerque, NM, June 1996, Vol. 2, p. XVI-27.
6. S. Sriram, G. Augustine, A. A. Burk, Jr., R. C. Glass, H. M. Hobgood, P. A. Orphanos, L. B. Rowland, T. J. Smith, C. D. Brandt, M. C. Driver, and R. H. Hopkins, IEEE Electron Device Lett. 17, 369 (1996).
7. N. Ramungul, T. P. Chow, M. Ghezzo, J. Kretchmer, and W. Hennessy, Technical Digest of IEEE 54th Annual Dev. Res. Conference, June 24-26, 1996, Santa Barbara, CA, p. 56.
8. S. T. Sheppard, M. R. Melloch, and J. A. Cooper, Jr., IEEE Electron Device Lett. 17, 4 (1996).
9. J. Gardner, M. V. Rao, O. W. Holland, G. Kelner, D. Simons, P. H. Chi, J. Andrews, J. Kretchmer, and M. Ghezzo, J. Electron. Mater. 25, 885 (1996).
10. T. Kimoto, A. Itoh, H. Matsunami, T. Nakata, and M. Watanabe, J. Electron. Mater. 24, 235 (1995).
11. N. Inoue, A. Itoh, T. Kimoto, H. Matsunami, T. Nakata, and M. Watanabe, Inst. Phys. Conf. Ser. 142, 525 (1995).
12. S. Seshadri, A. K. Agarwal, G. W. Eldridge, L. R. Rowland, A. A. Burk, G. Augustine, H. M. Hobgood, and C. D. Brandt, MRS Spring Meeting Tech. Digest, 1996.
13. T. Troffer, C. Peppermuller, G. Pensl, K. Rottner, and A. Schoner, J. Appl. Phys. 80, 3739 (1996).
14. M. V. Rao, P. Griffiths, J. Gardner, O. W. Holland, M. Ghezzo, J. Kretchmer, and J. A. Freitas, Jr., J. Electron. Mater. 25, 75 (1996).
15. T. Kimoto, A. Itoh, H. Matsunami, T. Nakata, and M. Watanabe, J. Electron. Mater. 25, 879 (1996).
16. A. Schoner, N. Nordell, K. Rottner, R. Helbig, and G. Pensl, Inst. Phys. Conf. Ser. 142, 493 (1995).
17. N. T. Bagraev, L. E. Klyachkin, and V. L. Sukhanov, Solid-State Electron. 36, 1741 (1993).
18. D. J. Larkin, P. G. Neudeck, J. A. Powell, and L. G. Matus, Inst. Phys. Conf. Ser. 137, 51 (1993).
19. R. C. Glass, G. Augustine, V. Balakrishna, H. M. Hobgood, R. H. Hopkins, J. Jenny, M. Skowronski, and W. J. Choyke, Inst. Phys. Conf. Ser. 142. 37 (1995).
20. N. Ramungul, V. Khemka, R. Tyagi, T. P. Chow, M. Ghezzo, P. G. Neudeck, J. Kretchmer, W. Hennessy, and D. M. Brown, Inst. Phys. Conf. Ser. 142, 713 (1995).
21. M. V. Rao, P. Griffiths, O. W. Holland, G. Kelner, J. A. Freitas, Jr., D. S. Simons, P. H. Chi, and M. Ghezzo, J. Appl. Phys. 77, 2479 (1995).
22. R. G. Wilson, Radiat. Eff. 46, 141 (1980).
23. J. A. Gardner, M. V. Rao, Y. L. Tian, O. W. Holland, E. G. Roth, P. H. Chi, and I. Ahmad, J. Electron. Mater. 26, 144 (1997).
24. J. F. Ziegler, J. P. Biersack, and U. Littmark, The Stopping and Range of Ions in Solids (Pergamon, New York, 1985).
25. M. V. Rao, R. K. Nadella, and O. W. Holland, J. Appl. Phys. 71, 126 (1992).
26. W. H. Hofker, Philips Res. Rep. 8, 41 (1975).
27. J. F. Gibbons and S. Mylroie, Appl. Phys. Lett. 22, 568 (1973).
28. B. K. Winterborn, Appl. Phys. Lett. 42, 205 (1983).
29. D. G. Ashworth, R. Oven, and B. Mundin, J. Phys. D 23, 870 (1990).
30. S. Ahmed, C. J. Barbero, T. W. Sigmon, and J. W. Erickson, Appl. Phys. Lett. 65, 67 (1994).
31. G. Pensl, V. V. Afanasev, M. Bassler, M. Schadt, T. Traffer, J. Heindl, H. P. Strunk, M. Maier, and W. J. Choyke, Inst. Phys. Conf. Ser. 142, 275 (1995).
32. L. A. Christel and J. F. Gibbons, J. Appl. Phys. 52, 5050 (1981).
33. R. E. Avila and C. D. Fung, J. Appl. Phys. 60, 1602 (1986).
34. A. M. Mazzone, Phys. Status Solidi A 95, 149 (1986).
35. M. Servidori, R. Angelucci, F. Cembali, P. Negrini, S. Solmi, P. Zaumseil, and U. Winter, J. Appl. Phys. 61, 1834 (1987).
36. A. O. Konstantinov, Sov. Phys. Semicond. 26. 151 (1992).
37. D. Nordstrom, M. V. Rao, O. W. Holland, G. Kelner, P. H. Chi, J. Kretchmer, and M. Ghezzo (unpublished).
38. K. Holzlein, H. Mitlehner, R. Rupp, R. Stein, D. Peters, J. Volkl, and D. Stephani, Inst. Phys. Conf. Ser. 142, 561 (1995).