Proton irradiation induced defects in 4H-SiC

Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 431-434

  Storasta, L ^a   Carlsson, F H C ^a   Sridhara, S G ^a   Aberg D ^b   Bergman, J P ^a   Hallen A ^b   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON ENERGY LEVELS; ELECTRON TRAPS; HOLE TRAPS; PROTON IRRADIATION; THERMODYNAMIC STABILITY;

MINORITY CARRIER TRANSIENT SPECTROSCOPY;

SILICON CARBIDE;

EID: 4244097727     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/msf.353-356.431     Document Type: Article

References (10)

1. T. Dalibor, G. Pensl, T. Kimoto, H. Matsunami, S. Sridhara, R. P. Devaty, and W. J. Choyke, Diamond and Related Materials 6, (1997), p. 1333.
2. T. Dalibor, G. Pensl, H. Matsunami, T. Kimoto, W. J. Choyke, A. Schöner, and N. Nordell, Phys. Stat. Sol. 162, (1997), p. 199.
3. C. Hemmingsson, N. T. Son, O. Kordina, J. P. Bergman, E. Janzén, J. L. Lindstrom, S. Savage, and N. Nordell, J. Appl. Phys. 81, (1997), p. 6155.
4. J. P. Doyle, M. K. Linnarsson, P. Pellegrino, N. Keskitalo, B. G. Svensson, A. Schöner, N. Nordell, and J. L. Lindstrom, J. Appl. Phys. 84, (1998), p. 1333.
5. G. C. Rybicki, J. Appl. Phys. 78, (1995), p. 2996.
6. M. Gong, S. Fung, C. D. Beling, and You Zhipu, J. Appl. Phys. 85, (1999), p. 7120.
7. R. Brunwin, B. Hamilton, P. Jordan, and A. R. Peaker, Electron. Lett. 15, (1979), p. 349.
8. D. Åberg, L Storasta, A. Hallén, and B.G. Svensson, these proceedings.
9. P Blood and J.W. Orton, The Electrical Characterization of Semiconductors: Majority Carriers and Electron States (Academic Press Limited, London, 1992).
10. J. A. Davidson and J. H. Evans, J. Appl. Phys. 81, (1997), p. 251.