Channeling implantations of Al+ into 6H silicon carbide

Applied Physics Letters

Volumn 74, Issue 26, 1999, Pages 3990-3992

  Morvan, E ^a   Godignon, P ^a   Vellvehi, M ^a   Hallen A ^b   Linnarsson, M ^b   Kuznetsov, A Yu ^b  

^a CSIC   (Spain)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000260711     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124246     Document Type: Article

References (12)

1. T. Kimoto, A. Itoh, N. Inoue, O. Takemura, T. Yamamoto, T. Nakajima, and H. Matsunami, Mater. Sci. Forum 264-268, 675 (1998).
2. T. Troffer, M. Schadt, T. Frank, H. Itoh, G. Pensl, J. Heindl, H. P. Strunk, and M. Maier, in Silicon Carbide: A Review of Fundamental Questions and Applications to Current Device Technology (Akademie Verlag GmbH, Berlin, 1997), p. 277.
3. M. V. Rao, P. Griffiths, O. W. Holland, G. Kelner, J. A. Freitas, Jr., D. S. Simons, P. H. Chi, and M. Ghezzo, J. Appl. Phys. 77, 2479 (1995).
4. E. Wendler, A. Heft, and W. Wesch, Nucl. Instrum. Methods Phys. Res. B 141, 105 (1998).
5. T. Kimoto, N. Inoue, and H. Matsunami, Phys. Status Solidi A 162, 263 (1997).
6. R. f. Davis, G. Kelner, M. Shur, J. W. Palmour, and J. A. Edmond, Proc. IEEE 79, 677 (1991).
7. R. Simonton, D. Kamenista, A. Ray, C. Park, K. Klein, and A. Tasch, Nucl. Instrum. Methods Phys. Res. B 55, 39 (1991).
8. J. Ziegler and R. Lever, Appl. Phys. Lett. 46, 358 (1985).
9. V. Raineri, R. Setola, F. Prioloand, and E. Rimini, Phys. Rev. B 44, 10568 (1991).
10. E. Morvan, P. Godignon, J. Montserrat, J. Fernández, D. Flores, J. Millán, and J. P. Chante, Mater. Sci. Eng., B 46, 218 (1997).
11. E. Morvan, P. Godignon, S. Berberich, M. Vellvehi, and J. Millán, Nucl. Instrum. Methods Phys. Res. B 147, 68 (1999).
12. B. R. Appelton and G. Foti, in Ion Beam Handbook for Material Analysis, edited by J. W. Mayer and E. Rimini (Academic, New York, 1977), p. 488.