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Physica B: Condensed Matter

Volumn 273-274, Issue , 1999, Pages 489-492

Impurity-assisted annealing of point defect complexes in ion- Implanted silicon

(3) Pellegrino, Paolo a Kuznetsov, Andrej Yu a Svensson, Bengt G a

a ROYAL INSTITUTE OF TECHNOLOGY (Sweden)

Author keywords

Annealing; DLTS; Ion implantation; Lattice disorder; Point defects; Silicon

Indexed keywords

ANNEALING; CRYSTAL GROWTH FROM MELT; CRYSTAL LATTICES; DEEP LEVEL TRANSIENT SPECTROSCOPY; DISSOCIATION; ELECTRON IRRADIATION; ION IMPLANTATION; POINT DEFECTS; SEMICONDUCTOR GROWTH; THERMODYNAMIC STABILITY; VANADIUM; VANADIUM COMPOUNDS;

HIGH-ORDER VACANCY CLUSTER;

SEMICONDUCTING SILICON;

EID: 0033355029 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-4526(99)00532-3 Document Type: Article

Times cited : (4)

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