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Volumn 72, Issue 23, 1998, Pages 3044-3046

Electrical characterization of the threshold fluence for extended defect formation in p-type silicon implanted with MeV Si ions

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0000780069     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121535     Document Type: Article
Times cited : (22)

References (23)
  • 13
    • 21544476673 scopus 로고    scopus 로고
    • Ph. D. thesis, Royal Institute of Technology, Sweden unpublished
    • J. Lalita, Ph. D. thesis, Royal Institute of Technology, Sweden, 1997 (unpublished).
    • (1997)
    • Lalita, J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.