Ion-beam nano-smoothing of sapphire and silicon carbide surfaces

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4468, Issue , 2001, Pages 17-24

  Fenner, D B ^a   DiFilippo, V ^b   Tetreault, T G ^a   Hirvonen, J K ^c   Feldman, L C ^d  

^a JDS Uniphase Corporation   (United States)

^b Tufts University   (United States)

^c U S ARMY RESEARCH LABORATORY   (United States)

^d VANDERBILT UNIVERSITY   (United States)

Author keywords

Atomic force microscope; Channeling; Damage; Gas cluster ion beam; Rutherford backscatter; Sapphire; Silicon carbide; Surface roughness

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; ION BEAMS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SAPPHIRE; SILICON CARBIDE; SILICON WAFERS; SINGLE CRYSTALS;

GAS-CLUSTER ION BEAMS (GCIB);

SURFACE ROUGHNESS;

EID: 0035767506     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.452556     Document Type: Article

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