Low-energy cluster ion beam modification of surfaces

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 148, Issue 1-4, 1999, Pages 1-11

  Yamada, Isao ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

Cluster ion beam; Lateral sputtering; Low energy ion beam; Shallow junction; Thin film deposition

Indexed keywords

COMPUTER SIMULATION; ION BEAMS; MOLECULAR DYNAMICS; SPUTTER DEPOSITION; SURFACE TREATMENT; THIN FILMS;

LOW ENERGY CLUSTER ION BEAM PROCESS;

ION BOMBARDMENT;

EID: 0033513762     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00875-1     Document Type: Article

References (49)

1. I. Yamada, Materials modification by energetic atoms and ions, in: S. Granbowswki, S.A. Barnett, S.M. Rossnagel, K. Wasa (Eds.), Materials Research Society Symposium Proceedings 1992, vol. 268, Pittsburgh, 1996, p. 261.
2. I. Yamada, Surf. Coat. Technol. 51 (1992) 514.
3. AMMTRA Final Report, Industrial Technology Council of the Ministry of International Trade and Industry, 1994.
4. I. Yamada, Atomistic mechanisms in beam synthesis and irradiation of materials, in: J.C. Barbour, D. Ilia, S. Roorda, M. Tsujioka (Eds.), Materials Research Society Symposium Proceedings, 1988, vol. 504, Materials Research Society, Pittsburgh, in press.
5. ACTA Final Report, Industrial Technology Council of the Ministry of International Trade and Industry, 1997.
6. Y. Murakami, N. Kuratani, S. Nishiyama, O. Imai, K. Ogata, Nucl. Instr. and Meth. B 121 (1997) 212.
7. M. Irie, H. Ohara, A. Nakayama, N. Kitagawa, T. Nomura, Nucl. Instr. and Meth. B 121 (1997) 133.
8. H. Nakai, H. Kuwahara, J. Shinohara, T. Kawaratani, T. Sassa, Y. Ikegami, Nucl. Instr. and Meth. B 112 (1996) 280.
9. R. Nonogaki, S. Yamada, T. Wada, Nucl. Instr. and Meth. B 121 (1997) 121.
10. I. Kanno, S. Hayashi, R. Takayama, H. Sakakima, T. Hirao, Nucl. Instr. and Meth. B 112 (1996) 125.
11. Proceedings of ACT International Symposium, Sponsored NEDO, Advanced Chemical Processing Technology Research Association (ACTA), Tokyo, October 1996.
12. ACT Symposium'97, Sponsored NEDO, Advanced Chemical Processing Technology Research Association (AC-TA), Tokyo, June 1997.
13. MITI Preceded R&D project 1998, Ion Engineering Institute Corporation.
14. K.H. Purser, Class Note Implantation School for the 12th International Conference on Ion Implantation Technology, Kyoto, June 1998.
15. Data given by Drs. Y. Hidaka, N. Takahasi from Sumitomo Eaton Nova Corporation.
16. J.F. Ziegler (Ed.), Ion Implantation, Science and Technology, 6th ed. (modified from Fig. 1-1, in Ch. 2) Ion Implantation Technology Co., Yorktown, New York, 1996.
17. I. Yamada, Proceedings of the 14th Symposium on Ion Sources and Ion-Assisted Technology, Tokyo, The Ion Engineering Society of Japan, Tokyo, 1991, p. 227.
18. I. Yamada, J. Matsuo, Ion solid interactions for materials modification and processing, in: D.B. Poker, D. Ila, Y.-T. Cheng, L.R. Harriott, T.W. Sigmon (Eds.), Materials Research Society Symposium Proceedings, 1995, vol. 396, Materials Research Society, Pittsburgh, 1996, p. 149.
19. I. Yamada, J. Matsuo, Advanced metallization for future ULSI, in: K.N. Tu, J.M. Poate, J.W. Mayer, L.C. Chen (Eds.), Materials Research Society Symposium Proceedings, 1996, vol. 427 Materials Research Society, Pittsburgh, 1997, p. 265.
20. I. Yamada, J. Matsuo, E.C. Jones, D. Takeuchi, T. Aoki, K. Goto, T. Sugii, Materials modification and synthesis by ion beam processing, in: D. Alexander, B. Park, N. Cheung, W. Skorupa (Eds.), Materials Research Society Symposium Proceedings, 1996, vol. 438, Materials Research Society, Pittsburgh, 1997, p. 368.
21. K. Goto, J. Matsuo, T. Sugii, H. Minakata, I. Yamada, T. Hisatugu, IEDM Tech. Dig. (1996) 435.
22. K. Goto, J. Matsuo, Y. Tada, T. Tanaka, Y. Momiyama, T. Sugii, I. Yamada, IEDM Tech. Dig., in press.
23. J. Matsuo, M. Akizuki, J. Nothby, G.H. Takaoka, I. Yamada, Surf. Rev. Lett. 3 (1) (1996) 1017.
24. M. Akizuki, J. Matsuo, S. Ogasawara, M. Harada, A. Doi, I. Yamada, Jpn. Appl. Phys. 35 (1996) 1450.
25. J. Matsuo, M. Akizuki, I. Yamada, in: J.L. Duggan, I.L. Morgan (Eds.), Proceedings of the Application of Accelerators in Research and Industry'96, AIP Press, New York, 1997, p. 449.
26. I. Yamada, The name of this project is Japan Science and Technology Corporation, Exploitation and Application Study Program: Gas cluster ion beam processing for high performance surface treatment.
27. Epion Corp. Catalogue, 4R Alfred circle, Bedford, Mass. 01730, USA.
28. B.G. Park, J. Bokor, H.S. Luftman, C.S. Rafferty, M.R. Pinto, IEEE Elec. Dev. Lett. 13 (1992) 507.
29. R.B. Fair (Ed.), Rapid Thermal Processing Science and Technology, Academic Press, Boston, 1993, p. 169.
30. T. Aoki, N. Shimada, D. Takeuchi, J. Matsuo, Z. Insepov, I. Yamada, in: Proceedings of the Solid State Devices and Materials, 1996, p. 49.
31. J. Matsuo, D. Takeuchi, T. Aoki, I. Yamada, in: E. Ishida, S. Banerjee, S. Meta, T.C. Smith, M. Current, L. Larson, A. Tash (Eds.), IEEE Proceedings of the 11th International Conference on Ion Implantation Technology, Austin, TX, vol. 1, issue 1, 16-21 June 1996, IEEE Service center, Piscataway, NJ, 1997, p. 768.
32. D. Takeuchi, N. Shimada, J. Matsuo, I. Yamada in: E. Ishida, S. Banerjee, S. Meta, T.C. Smith, M. Current, L. Larson, A. Tash (Eds.), IEEE Proceedings of the 11th International Conference on Ion Implantation Technology, Austin, TX, vol. 1, issue 1, 16-21 June 1996, IEEE Service center, Piscataway, NJ, 1997, p. 772.
33. K.S. Jones, G.A. Rozgonyi, in: R.B. Fair (Ed.), Rapid Thermal Processing Science and Technology, Academic Press, Boston, 1993, p. 123.
34. M. Rodder, Q.Z. Hong, M. Nandakumar, S. Aur, J.C. Hu, I.-C. Chen, IEDM Tech. Dig., (1996) 563.
35. M. Bohr, S.S. Ahmed, S.U. Ahmed, M. Bost, T.R. Ghani, J. Greason, R. Hainsey, C. Jan, P. Packan, S. Sivakumar, S. Thompson, S. Yang, IEDM Tech. Dig., (1996) 847.
36. E.L. Hu, C.-H. Chen, D.K. Green, J. Vac. Sci. Technol. B 14 (1996) 3632.
37. G.S. Oehrlein, R.M. Tromp, J.C. Tsang, Y.H. Lee, E.J. Petrillo, J. Electrochem. Soc. 132 (1985) 1441.
38. K.F. Schuegraf, C.M. Hu, in: Proceedings of the IEEE International Reliability Physics, Symposium, San Jose, CA 1994 (unpublished) p. 126.
39. N. Toyoda, J. Matsuo, I. Yamada, in: J.L. Duggan, I.L. Morgan (Eds.), Proceedings of the Application of Accelerators in Research and Industry'96, AIP Press, New York, 1997, p. 483.
40. T. Aoki, J. Matsuo, Z. Insepov, I. Yamada, Nucl. Instr. and Meth. B 121 (1997) 49.
41. Z. Insepov, I. Yamada, Nucl. Instr. and Meth. B 121 (1997) 44.
42. Z. Insepov, I. Yamada, M. Sosnowski, Paper presented at the American Vacuum Society '96 Fall Meeting Philadelphia, 14-18 October 1996 (also J. Vac. Sci. Technol. in press).
43. Z. Insepov, I. Yamada, M. Sosnowski, Paper presented at the American Vacuum Society '96 Fall Meeting Philadelphia, 14-18 October 1996 (also J. Vac. Sci. Technol. in press).
44. Z. Insepov, M. Sosnowski, I. Yamada, in: I. Yamada et al. (Eds.), Laser and Ion Beam Modification of Materials, Elsevier, Amsterdam, 1994, p. 111.
45. Z. Insepov, I. Yamada, Nucl. Instr. and Meth. B 99 (1995) 248.
46. Y. Kitazoe, Y. Yamamura, Radiat. Eff. Lett. 50 (1980) 39.
47. W.C. Chu, Y.P. Li, J.R. Liu, J.Z. Wu, S.C. Tidrow, N. Toyoda, J. Matsuo, I. Yamada, Appl. Phys. Lett. 72 (1997) 246.
48. I. Yamada, NEDO Consortium Program 1997, Project Office: Management Office: Osaka Science and Technology Center, Utsubo, Osaka Japan: R&D for ultra-high quality transparent conductive film fabrication.
49. I. Yamada, Japan Science and Technology Corporation, Agency of Science and Technology (JST), Innovative Research Application Program, 1998-2000.