Effect of annealing a silicon wafer in argon with a very low oxygen partial pressure

Journal of Applied Physics

Volumn 88, Issue 11, 2000, Pages 6881-6886

  Suzuki, Toshiharu ^a  

^a SONY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001277772     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1323512     Document Type: Article

References (17)

1. H. Shiraki, Jpn. J. Appl. Phys. 13, 1514 (1974).
2. S. P. Murarka, H. J. Levinstein, R. B. Marcus, and R. S. Wagner, J. Appl. Phys. 48, 4001 (1977).
3. M. Futagami and M. Hamasaki, Jpn. J. Appl. Phys. 17, 1343 (1978).
4. S. Kishino, S. Isomae, M. Tamura, and M. Maki, Appl. Phys. Lett. 31, 1 (1978).
5. T. Suzuki, J. Appl. Phys. 88, 1141 (2000).
6. K. B. Koller, W. A. Schmidt, and J. E. Butler, J. Appl. Phys. 64, 4704 (1988).
7. A. Masuda, Shinku-gijutsu Joyo-shohyo (Nikkan-kogyo, Shinbunsha, 1965), pp. 92-97. This handbook refers the following three articles for the vapor pressures of silicon and its oxide. C. J. Smithells, Metals Reference Book, 4th ed. (Butterworths, London, 1967), Vol. 1, p. 264; P. V. Gold and M. I. Mochnev, Zh. Prikl. Khim. (St.-Peterburg) 21, 1249 (1948); A. N. Nesmeyanov and L. P. Firsova, Izv. Akad. Nauk SSSR, Otd. Tekh. Nauk, Metall. Topl. 3, 150 (1959).
8. A. Masuda, Shinku-gijutsu Joyo-shohyo (Nikkan-kogyo, Shinbunsha, 1965), pp. 92-97. This handbook refers the following three articles for the vapor pressures of silicon and its oxide. C. J. Smithells, Metals Reference Book, 4th ed. (Butterworths, London, 1967), Vol. 1, p. 264; P. V. Gold and M. I. Mochnev, Zh. Prikl. Khim. (St.-Peterburg) 21, 1249 (1948); A. N. Nesmeyanov and L. P. Firsova, Izv. Akad. Nauk SSSR, Otd. Tekh. Nauk, Metall. Topl. 3, 150 (1959).
9. A. Masuda, Shinku-gijutsu Joyo-shohyo (Nikkan-kogyo, Shinbunsha, 1965), pp. 92-97. This handbook refers the following three articles for the vapor pressures of silicon and its oxide. C. J. Smithells, Metals Reference Book, 4th ed. (Butterworths, London, 1967), Vol. 1, p. 264; P. V. Gold and M. I. Mochnev, Zh. Prikl. Khim. (St.-Peterburg) 21, 1249 (1948); A. N. Nesmeyanov and L. P. Firsova, Izv. Akad. Nauk SSSR, Otd. Tekh. Nauk, Metall. Topl. 3, 150 (1959).
10. A. Masuda, Shinku-gijutsu Joyo-shohyo (Nikkan-kogyo, Shinbunsha, 1965), pp. 92-97. This handbook refers the following three articles for the vapor pressures of silicon and its oxide. C. J. Smithells, Metals Reference Book, 4th ed. (Butterworths, London, 1967), Vol. 1, p. 264; P. V. Gold and M. I. Mochnev, Zh. Prikl. Khim. (St.-Peterburg) 21, 1249 (1948); A. N. Nesmeyanov and L. P. Firsova, Izv. Akad. Nauk SSSR, Otd. Tekh. Nauk, Metall. Topl. 3, 150 (1959).
11. J. R. Ligenza, J. Phys. Chem. 65, 2011 (1961).
12. B. E. Deal, J. Electrochem. Soc. 125, 576 (1978).
13. D. R. Walters and A. T. A. Zegers-Van Duijhoven, Microelectron. Reliab. 38, 259 (1998).
14. E. D. Palik, V. M. Belmdez, and O. J. Glembocki, J. Electrochem. Soc. 132, 871 (1985).
15. L. D. Dyer, G. J. Grant, C. M. Tipton, and A. E. Stephens, J. Electrochem. Soc. 136, 3016 (1989).
16. K. E. Bean and P. S. Gleim, Proc. IEEE 57, 1469 (1969).
17. N. Cabrera and N. F. Mott, Rep. Prog. Phys. 12, 163 (1948).