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Semiconductor Science and Technology

Volumn 16, Issue 10, 2001, Pages 844-848

1.3 μm resonant-cavity InGaAs/GaAs quantum dot light-emitting devices

(11) Krestnikov, I L a Maleev, N A a Sakharov, A V a Kovsh, A R a Zhukov, A E a Tsatsul'Nikov, A F a Ustinov, V M a Alferov, Zh I a Ledentsov, N N a,b Bimberg, D b Lott, J A c

a IOFFE INSTITUTE (Russian Federation)

b TECHNISCHE UNIVERSITÄT BERLIN (Germany)

c Air Force Institute of Technology (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAVITY RESONATORS; DIELECTRIC MATERIALS; LIGHT EMITTING DIODES; SEMICONDUCTING INDIUM COMPOUNDS;

DISTRIBUTED BRAGG REFLECTORS (DBR);

SEMICONDUCTOR QUANTUM DOTS;

EID: 0035481127 PISSN: 02681242 EISSN: None Source Type: Journal
DOI: 10.1088/0268-1242/16/10/306 Document Type: Article

Times cited : (19)

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