Single transverse mode operation of long wavelength (approx. 1.3μm) InAs GaAs quantum dot laser

Electronics Letters

Volumn 35, Issue 23, 1999, Pages 2038-2039

  Maximov, M V ^a   Shernyakov, Yu M ^a   Kaiander, I N ^a   Bedarev, D A ^a   Kondrat'eva, E Yu ^a   Kop'ev, P S ^a   Kovsh, A R ^a   Maleev, N A ^a   Mikhrin, S S ^a   Tsatsul'nikov, A F ^a   Ustinov, V M ^a   Volovik, B V ^a   Zhukov, A E ^a   Alferov, Zh J ^a   Ledentsov, N N ^b   Bimberg, D ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ETCHING; GROUND STATE; PHASE TRANSITIONS; PHOTORESISTS; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SILICA; WAVEGUIDES;

MAXIMAL MODEL GAIN; RIDGE WAVEGUIDE LASER DIODES; SINGLE TRANSVERSE MODE CONTINUOUS WAVE; THRESHOLD CURRENT DENSITY;

SEMICONDUCTOR LASERS;

EID: 0033309095     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19991392     Document Type: Article

References (6)

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