Lasing characteristics of lasers with a vertical cavity based on In0.2Ga0.8As quantum wells

Technical Physics Letters

Volumn 25, Issue 10, 1999, Pages 775-777

  Gaisler V A ^a   Toropov, A I ^a   Bakarov, A K ^a   Kalagin, A K ^a   Moshegov, N T ^a   Tenne D A ^a   Kachanova, M M ^a   Kopp, O R ^a   Nenasheva, L A ^a   Medvedev, A S ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

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EID: 0033244950     PISSN: 10637850     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1262631     Document Type: Article

References (7)

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