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Volumn , Issue , 1999, Pages 39-40
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GaAsSb quantum-well for 1.3-μm VCSEL application
a
a
NEC CORPORATION
(Japan)
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Author keywords
[No Author keywords available]
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Indexed keywords
BAND STRUCTURE;
CURRENT DENSITY;
LATTICE CONSTANTS;
MOLECULAR BEAM EPITAXY;
SEMICONDUCTING ANTIMONY;
SEMICONDUCTING GALLIUM COMPOUNDS;
SEMICONDUCTOR QUANTUM WELLS;
TERNARY SYSTEMS;
GAS SOURCE MOLECULAR BEAM EPITAXY;
TERNARY ALLOY;
VERTICAL CAVITY SURFACE EMITTING LASERS;
SEMICONDUCTOR LASERS;
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EID: 0032599041
PISSN: 10994742
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Article |
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Times cited : (7)
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References (4)
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