A fully depleted lean-channel transistor (DELTA)--A novel vertical ultra thin SOI MOSFET

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1989, Pages 833-836

  Hisamoto, Digh ^a   Kaga, Toru ^a   Kawamoto, Yoshifumi ^a   Takeda, Eiji ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS, ULSI--LAYOUT; SEMICONDUCTOR DEVICE MANUFACTURE--SILICON ON INSULATOR TECHNOLOGY; TRANSISTORS, FIELD EFFECT;

DEEP SUBMICRON REGION; HIGH TRANSCONDUCTANCE; LEAN-CHANNEL TRANSISTOR; SHORT CHANNEL EFFECTS; SINGLE-CRYSTAL DEVICES; ULTRA THIN SOI MOSFET;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0024918341     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)