Novel trench DRAM cell with a vertical access transistor and buried strap (VERI BEST) for 4Gb/16Gb

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1999, Pages 25-28

  Gruening, U ^a   Radens, C J ^a   Mandelman, J A ^a   Michaelis, A ^a   Seitz, M ^a   Arnold, N ^a   Lea, D ^a   Casarotto, D ^a   Knorr, A ^a   Halle, S ^a   Ivers, T H ^a   Economikos, L ^a   Kudelka, S ^a   Rahn, S ^a   Tews, H ^a   et al , ^a  

^a INFINEON TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARRAYS; CELLULAR ARRAYS; GATES (TRANSISTOR); MOS CAPACITORS; MOSFET DEVICES;

BURIED STRAP; VERTICAL ACCESS TRANSISTORS;

DYNAMIC RANDOM ACCESS STORAGE;

EID: 17344393577     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)