High performance CMOS surrounding gate transistor (SGT) for ultra high density LSIs

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1988, Pages 222-225

  Takato, H ^a   Sunouchi, K ^a   Okabe, N ^a   Nitayama, A ^a   Hieda, K ^a   Horiguchi, F ^a   Masuoka, F ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC INVERTERS; INTEGRATED CIRCUITS, LSI; SEMICONDUCTOR DEVICES, MOS;

CMOS INVERTER; GATE ELECTRODE; HIGH DENSITY LSI; PLANAR TRANSISTORS; SILICON ISLAND;

TRANSISTORS, FIELD EFFECT;

EID: 0024172246     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)