Assessment of quantum yield experiments via full band Monte Carlo simulations

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1997, Pages 873-876

  Ghetti, Andrea ^a   Alam, Muhammad A ^a   Bude, Jeff ^a   Venturi, Franco ^a  

^a NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FULL BAND MONTE CARLO (FBMC) SIMULATION; QUANTUM YIELD (QY); STRESS INDUCED LEAKAGE CURRENTS (SILC);

COMPUTER SIMULATION; INDUCED CURRENTS; LEAKAGE CURRENTS; MONTE CARLO METHODS; OXIDES; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SUBSTRATES;

QUANTUM THEORY;

EID: 84886448048     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)