Characterization and modeling of edge direct tunneling (EDT) leakage in ultrathin gate oxide MOSFETs

IEEE Transactions on Electron Devices

Volumn 48, Issue 6, 2001, Pages 1159-1164

  Yang, K N ^a   Huang, H T ^a   Chen, M J ^a   Lin, Y M ^b   Yu, M C ^b   Jang, S M ^b   Yu, D C H ^b   Liang, M S ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRON TUNNELING; GATES (TRANSISTOR); POLYSILICON; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING;

EDGE DIRECT TUNNELING (EDT);

MOSFET DEVICES;

EID: 0035367617     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.925242     Document Type: Article

References (17)

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