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Volumn 289, Issue 1-2, 2001, Pages 57-70

Molecular dynamics simulation of irradiation-induced amorphization of cubic silicon carbide

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; AMORPHOUS MATERIALS; ANNEALING; COMPUTER SIMULATION; CRYOGENICS; CRYSTALLINE MATERIALS; IRRADIATION; MOLECULAR DYNAMICS; POINT DEFECTS; RADIATION EFFECTS; THERMAL EFFECTS;

EID: 0034831510     PISSN: 00223115     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3115(00)00684-X     Document Type: Article
Times cited : (54)

References (102)
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    • (1998) J. Nucl. Mater. , vol.258-263 , pp. 1589
    • Ueda, S.1
  • 5
    • 4243716244 scopus 로고
    • March
    • McDonnell-Douglas Aerospace Team, DOE/ER-54101 MDC92E0008, vols. I, II and III, March 1992.
    • (1992) DOE/ER-54101 MDC92E0008 , vol.1-3
  • 68
    • 85031487006 scopus 로고    scopus 로고
    • private communication, still unpublished
    • MD simulations of displacement cascades in SiC, induced by self-ions to which the mass of Au is given, seem to suggest that large clusters may be formed within the cascade, so that maybe DIA could take place in that case (W.J. Weber, F. Gao, private communication, still unpublished).
    • Weber, W.J.1    Gao, F.2
  • 93
    • 0001335963 scopus 로고    scopus 로고
    • D. Mura et al., Phys. Rev. B 58 (1998) 10357.
    • (1998) Phys. Rev. B , vol.58 , pp. 10357
    • Mura, D.1
  • 94
    • 85031481637 scopus 로고    scopus 로고
    • Ph.D. Thesis, Universidad Politécnica de Madrid, Spain
    • L. Malerba, Ph.D. Thesis, Universidad Politécnica de Madrid, Spain, 2000.
    • (2000)
    • Malerba, L.1
  • 97
    • 85031477515 scopus 로고    scopus 로고
    • note
    • A = number of A positions.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.