Damage response to irradiation temperature and ion fluence in c+-Irradiated 6H-SIC

Materials Research Society Symposium - Proceedings

Volumn 540, Issue , 1999, Pages 183-188

  Jiang, W ^a   Weber, W J ^a   Thevuthasan, S ^a  

^a PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; ANNEALING; CRYSTAL DEFECTS; CRYSTAL LATTICES; CRYSTALLOGRAPHY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON CARBIDE; SINGLE CRYSTALS; TEMPERATURE;

ION FLUENCE; POST IRRADIATION ANNEALING;

ION BOMBARDMENT;

EID: 0032592091     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

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