Radiation-induced amorphization and recrystallization of α-SiC single crystal

Journal of Nuclear Materials

Volumn 271-272, Issue , 1999, Pages 11-14

  Kawatsura, K ^a   Shimatani, N ^a   Igarashi, T ^a   Inoue, T ^a   Terazawa, N ^a   Aral, S ^a   Aoki, Y ^b   Yamamoto, S ^b   Narumi, K ^b   Naramoto, H ^b   Horino, Y ^c   Mokuno, Y ^c   Fujii, K ^c  

^a KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

^b JAPAN ATOMIC ENERGY AGENCY   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; CRYSTAL DEFECTS; DIFFUSION IN SOLIDS; DOSIMETRY; RADIATION DAMAGE; RAMAN SPECTROSCOPY; RAPID THERMAL ANNEALING; RECRYSTALLIZATION (METALLURGY); RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDE;

DOSE DEPENDENCE; LASER RAMAN SCATTERING; RADIATION INDUCED DEFECTS;

ION IMPLANTATION;

EID: 0033131454     PISSN: 00223115     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3115(98)00726-0     Document Type: Article

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