In situ study of the accumulation of ion-beam-induced damage in single crystal 3C silicon carbide

Materials Science Forum

Volumn 239-241, Issue , 1997, Pages 155-158

  Weber, W J ^a   Yu, N ^b,c  

^a PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

^b LOS ALAMOS NATIONAL LABORATORY   (United States)

^c TEXAS INSTRUMENTS   (United States)

Author keywords

Amorphization; In Situ Rutherford Backscattering Channeling; Ion Beam Damage; Silicon Carbide

Indexed keywords

AMORPHIZATION; ARGON; CRYSTAL DEFECTS; DOSIMETRY; ELECTRON ENERGY LEVELS; ION BEAMS; IRRADIATION; RADIATION DAMAGE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON CARBIDE; TEMPERATURE; THIN FILMS;

CHANNELING GEOMETRY; DAMAGE ACCUMULATION; ION BEAM DAMAGE; TEMPERATURE DEPENDENCE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0030683221     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.239-241.155     Document Type: Article

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