Threshold irradiation dose for amorphization of silicon carbide

Materials Research Society Symposium - Proceedings

Volumn 439, Issue , 1997, Pages 595-606

  Snead, L L ^a   Zinkle, S J ^a  

^a OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; DOSIMETRY; INTERFACIAL ENERGY; ION BOMBARDMENT; NEUTRON IRRADIATION; SINGLE CRYSTALS; SURFACE STRUCTURE; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

THRESHOLD IRRADIATION DOSE;

SILICON CARBIDE;

EID: 0030653698     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (28)