Dead space effect on the wavelength dependence of gain and noise in avalanche photodiodes

IEEE Transactions on Electron Devices

Volumn 47, Issue 9, 2000, Pages 1685-1693

  Pauchard, Alexandre R ^a,c   Besse, Pierre A ^b   Popovic, Rade S ^c  

^a IEEE   (United States)

^b EPFL   (Switzerland)

^c Nova Crystals Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE DIODES; ENERGY ABSORPTION; GAIN MEASUREMENT; HOT CARRIERS; IMPACT IONIZATION; MATHEMATICAL MODELS; PHOTONS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; SPURIOUS SIGNAL NOISE; ULTRAVIOLET DETECTORS; ULTRAVIOLET RADIATION;

AVALANCHE MULTIPLICATION; AVALANCHE NOISE; AVALANCHE PHOTODIODES; DEAD SPACE EFFECT; NOISE FACTOR; WAVELENGTH DEPENDENT MULTIPLICATION MEAN GAIN;

PHOTODIODES;

EID: 0034275412     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.861578     Document Type: Article

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