Measurement of the ionization rates in diffused silicon p-n junctions

Solid State Electronics

Volumn 13, Issue 5, 1970, Pages 583-608

  Van Overstraeten, R ^a   De Man, H ^a  

^a UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

RI; SEMICONDUCTORS;

EID: 0014778389     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(70)90139-5     Document Type: Article

References (16)

1. Avalanche breakdown of diffused silicon p-n junctions
2. Direct Measurement of the Dielectric Constants of Silicon and Germanium
3. Measurement of the effective carrier lifetime by a distortion technique
4. Zur durchbruchspannung diffundierter pn-übergänge in silizium
5. Avalanche Breakdown and Multiplication in SiliconpinJunctions