Optical functions of silicon determined by two-channel polarization modulation ellipsometry

Optical Materials

Volumn 1, Issue 1, 1992, Pages 41-47

  Jellison Jr , G E ^a  

^a OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS; LIGHT POLARIZATION; OPTICAL PROPERTIES; REFRACTIVE INDEX;

EXTINCTION COEFFICIENT; POLARIZATION MODULATION ELLIPSOMETRY; SPECTROSCOPIC ELLIPSOMETRY;

SEMICONDUCTING SILICON;

EID: 0026461497     PISSN: 09253467     EISSN: None     Source Type: Journal    
DOI: 10.1016/0925-3467(92)90015-F     Document Type: Article

References (14)

1. Spectroscopic Analysis of the Interface Between Si and Its Thermally Grown Oxide
2. Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV
3. Two-channel polarization modulation ellipsometer
4. High Precision Scanning Ellipsometer
5. Interspecimen Comparison of the Refractive Index of Fused Silica
6. Determination of the optical functions of transparent glasses by using spectroscopic ellipsometry
7. Optical Constants of Epitaxial Silicon in the Region 1–3.3 eV
8. Use of the biased estimator in the interpretation of spectroscopic ellipsometry data