Optimum carrier distribution of the IGBT

Solid-State Electronics

Volumn 44, Issue 9, 2000, Pages 1573-1583

  Sheng, K ^a   Udrea, F ^a   Amaratunga, G A J ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANODES; CARRIER CONCENTRATION; CATHODES; COMPUTER SIMULATION; SEMICONDUCTOR DEVICE MODELS;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT);

BIPOLAR TRANSISTORS;

EID: 0034274114     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00103-9     Document Type: Article

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