1200 V trench gate NPT-IGBT(IEGT) with excellent low on-state voltage

IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Volumn , Issue , 1998, Pages 75-79

  Takeda, T ^a   Kuwahara, M ^a   Kamata, S ^a   Tsunoda, T ^a   Imamura, K ^a   Nakao, S ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; COMPUTER SIMULATION; ELECTRIC POTENTIAL; ELECTRODES; MICROPROCESSOR CHIPS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

INJECTION ENHANCEMENT GATE TRANSISTORS (IEGT); NON PUNCH THROUGH-INSULATED GATE BIPOLAR TRANSISTORS (NPT-IGBT);

GATES (TRANSISTOR);

EID: 0031640911     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)