Advanced lifetime control for reducing turn-off switching losses of 4.5 kV IEGT devices

IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Volumn , Issue , 1998, Pages 39-42

  Eicher, Simon ^a   Ogura, Tsuneo ^a   Sugiyama, Koichi ^a   Ninomiya, Hideaki ^a   Ohashi, Hiromichi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC LOSSES; GATES (TRANSISTOR); ION BOMBARDMENT; NEGATIVE RESISTANCE; POWER ELECTRONICS; SWITCHING;

INJECTION ENHANCED GATE TRANSISTORS (IEGT); PROTON IRRADIATION; TURN OFF SWITCHING LOSSES;

BIPOLAR TRANSISTORS;

EID: 0031637764     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)