Punchthrough type GTO with buffer layer and homogeneous low efficiency anode structure

IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Volumn , Issue , 1996, Pages 261-264

  Eicher, S ^a   Bauer, F ^a   Weber, A ^a   Zeller, H R ^a   Fichtner, W ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

HOMOGENEOUS ANODE STRUCTURE; PUNCHTHROUGH TYPE THYRISTOR; TURN OFF LOSSES;

ANODES; ELECTRIC CURRENT CONTROL; POWER ELECTRONICS; SEMICONDUCTOR DEVICE STRUCTURES;

THYRISTORS;

EID: 0029709974     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)