Design concept for the low forward voltage drop 4500 V trench IGBT

IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Volumn , Issue , 1998, Pages 43-46

  Nitta, T ^a   Uenishi, A ^a   Minato, T ^a   Kusunoki, S ^a   Takahashi, T ^a   Nakamura, H ^a   Nakamura, K ^a   Aono, S ^a   Hataria, M ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; MOSFET DEVICES; POWER ELECTRONICS; SEMICONDUCTOR DEVICE STRUCTURES;

INSULATED GATE BIPOLAR TRANSISTORS; VOLTAGE DROP;

BIPOLAR TRANSISTORS;

EID: 0031617640     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)